Statistical analyses of random telegraph noise amplitude in ultra-narrow (deep sub-10nm) silicon nanowire transistors

Size dependence of random telegraph noise (RTN) in ultra-narrow silicon nanowire transistors with width far less than 10nm is experimentally measured and statistically analyzed for the first time. Single-trap RTN amplitude shows nearly exponential distributions, which reaches 170mV at 1.8% quantile...

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Bibliographic Details
Published in2017 Symposium on VLSI Technology pp. T50 - T51
Main Authors Hao Qiu, Takeuchi, Kiyoshi, Mizutani, Tomoko, Saraya, Takuya, Jiezhi Chen, Kobayashi, Masaharu, Hiramoto, Toshiro
Format Conference Proceeding
LanguageEnglish
Published JSAP 01.06.2017
Subjects
Field effect transistors
Mathematical model
Potential well
Silicon
Statistical distributions
Very large scale integration
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Summary:Size dependence of random telegraph noise (RTN) in ultra-narrow silicon nanowire transistors with width far less than 10nm is experimentally measured and statistically analyzed for the first time. Single-trap RTN amplitude shows nearly exponential distributions, which reaches 170mV at 1.8% quantile for the narrowest transistor. The origins of long tail distributions and strong size dependence are discussed.
ISSN:2158-9682
DOI:10.23919/VLSIT.2017.7998197