A comprehensive study for dielectric charging process in silicon nitride films for RF MEMS switches using Kelvin Probe Microscopy

In this work we present for the first time a systematic investigation for the dielectric charging in silicon nitride films for RF MEMS capacitive switches based on Kelvin probe microscopy methodology. The effect of the underneath physical layer over which the dielectric will be deposited has been fi...

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Published inTRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference pp. 789 - 793
Main Authors Zaghloul, U., Belarni, A., Coccetti, F., Papaioannou, G.J., Bouscayrol, L., Pons, P., Plana, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2009
Subjects
Dielectric charging
Dielectrics
Gold
Kelvin
MEMS switches
Microscopy
Physical layer
Probes
Radiofrequency microelectromechanical systems
Semiconductor films
Silicon compounds
Silicon nitride
Switches
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Summary:In this work we present for the first time a systematic investigation for the dielectric charging in silicon nitride films for RF MEMS capacitive switches based on Kelvin probe microscopy methodology. The effect of the underneath physical layer over which the dielectric will be deposited has been first investigated through depositing SiN films over thermally grown oxide, evaporated gold and electroplated gold layers. Then, the dielectric films have been deposited with different thicknesses in order to study the impact of dielectric thickness. Finally, the effect of the deposition conditions has been investigated through depositing SiN films using low and high frequency PECVD method.
ISBN:1424441900
9781424441907
ISSN:2159-547X
DOI:10.1109/SENSOR.2009.5285667