Characterizing thin film PV devices with Low-Incidence Surface Milling by Focused Ion Beam
We used Low-Incidence Surface Milling by Focused Ion Beam (LISM-FIB) at glancing incident angle from the film surface to expose complete structures of thin-film CdTe device for scanning electron microscopic (SEM) investigation. Specific sample preparation procedures of this method are described. Thi...
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Published in | 2011 37th IEEE Photovoltaic Specialists Conference pp. 001695 - 001699 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2011
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Subjects | |
Online Access | Get full text |
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Summary: | We used Low-Incidence Surface Milling by Focused Ion Beam (LISM-FIB) at glancing incident angle from the film surface to expose complete structures of thin-film CdTe device for scanning electron microscopic (SEM) investigation. Specific sample preparation procedures of this method are described. This method enables observation of micro-features in the thickness dimension of thin film devices in a planar view for various microscopic studies, particularly electron microscopy. We have observed that a ~52 nm thick buffer layer in Pilkington TEC glass is extended to approximately 1 μm from the top view in SEM. We also provide two consistent methods for identifying the exposed layers. An interesting feature of a porous layer of ~100 nm at CdTe side of the CdS/CdTe junction has been observed for the first time. Impacts of such a layer on thin CdTe PV devices are discussed. |
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ISBN: | 9781424499663 1424499666 |
ISSN: | 0160-8371 |
DOI: | 10.1109/PVSC.2011.6186281 |