Doping effect of SiO2/CeO2 on the dielectric, ferroelectric and piezoelectric properties of (Ba0.7Ca0.3)(Zr0.2Ti0.8)O3 ceramics

Lead-free (Ba 0.7 Ca 0.3 )(Zr 0.2 Ti 0.8 )O 3 ceramics (BZT-50BCT) with x wt% (x=0,0.05,0.1,0.2,0.4) dopant (SiO 2 and CeO 2 ) were prepared by the conventional solid-state reaction from the industry available raw materials. The doping effect of SiO 2 and CeO 2 with different concentrations on the m...

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Bibliographic Details
Published inProceedings of 2014 International Symposium on Electrical Insulating Materials pp. 465 - 468
Main Authors Wenfeng Liu, Daqi Zhao, Shengtao Li
Format Conference Proceeding
LanguageEnglish
Published The Institute of Electrical Engineers, Japan 01.06.2014
Subjects
Ceramics
d 33
dielectric properties
Doping
Ions
Lattices
Lead
Microscopy
Nickel
piezoelectric properties
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Summary:Lead-free (Ba 0.7 Ca 0.3 )(Zr 0.2 Ti 0.8 )O 3 ceramics (BZT-50BCT) with x wt% (x=0,0.05,0.1,0.2,0.4) dopant (SiO 2 and CeO 2 ) were prepared by the conventional solid-state reaction from the industry available raw materials. The doping effect of SiO 2 and CeO 2 with different concentrations on the microstructures and electric properties of BZT-50BCT ceramics was systematically investigated in the present study. Moderate doping level would result in the fine microstructures and the consequent enhanced dielectric, ferroelectric and piezoelectric properties while excessive doping would cause the degradation of the properties. The best piezoelectric performance of d 33 =476pC/N was achieved by 0.05 wt% CeO 2 doping.
DOI:10.1109/ISEIM.2014.6870819