ESD qualification changes for 45nm and beyond

As the silicon technologies advance further into sub-50 nm feature sizes, the circuit demands for high-speed operation are continually making ESD into a challenging issue. This paper reviews the current perception about ESD and why there must be an immediate paradigm shift for the ESD qualification...

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Bibliographic Details
Published in2008 IEEE International Electron Devices Meeting pp. 1 - 4
Main Author Duvvury, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2008
Subjects
Breakdown voltage
Capacitance
Current density
Degradation
Electrostatic discharge
Integrated circuit interconnections
Integrated circuit modeling
Protection
Qualifications
Silicon
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Summary:As the silicon technologies advance further into sub-50 nm feature sizes, the circuit demands for high-speed operation are continually making ESD into a challenging issue. This paper reviews the current perception about ESD and why there must be an immediate paradigm shift for the ESD qualification requirements.
ISBN:9781424423774
1424423775
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796688