Experimental study on current collapse of GaN MOSFETs, HEMTs and MOS-HEMTs

We report on the experimental results of current collapse measurements, using both conventional pulse method and a new DC method, performed on GaN MOSFETs, HEMTs and MOS-HEMTs. The current collapse phenomena were measured and compared between the different device types, epilayer dopings, RESURF regi...

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Bibliographic Details
Published in2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 225 - 228
Main Authors Li, Z, Marron, T, Naik, H, Huang, W, Chow, T P
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
Current measurement
Doping
Gallium nitride
HEMTs
Length measurement
MODFETs
MOSFETs
Performance evaluation
Pulse measurements
Temperature
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Summary:We report on the experimental results of current collapse measurements, using both conventional pulse method and a new DC method, performed on GaN MOSFETs, HEMTs and MOS-HEMTs. The current collapse phenomena were measured and compared between the different device types, epilayer dopings, RESURF region lengths and MOS channel lengths, at both room temperature and elevated temperatures.
ISBN:1424477182
9781424477180
ISSN:1063-6854
1946-0201