Characteristics of thermal treated quantum dot infrared photodetector

The quantum-dot infrared photodetectors (QDIPs) has attracted much attention and has been widely investigated for mid-infrared applications in recent years. Compared with quantum well infrared photodetectors, QDIPs are sensitive to normal-incidence infrared radiation owing to three-dimensional confi...

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Bibliographic Details
Published inDigest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004 pp. 174 - 175
Main Authors Hwang, S.H., Shin, J.C., Song, J.D., Choi, W.J., Lee, J.I., Han, H., Lee, S.-W., Kwack, H.-S., Cho, Y.-H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Carrier confinement
Dark current
Electrons
Infrared detectors
Photodetectors
Physics
Quantum dots
Thermal degradation
US Department of Transportation
Voltage
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Summary:The quantum-dot infrared photodetectors (QDIPs) has attracted much attention and has been widely investigated for mid-infrared applications in recent years. Compared with quantum well infrared photodetectors, QDIPs are sensitive to normal-incidence infrared radiation owing to three-dimensional confinement of the electrons in the quantum dots (QDs). tn addition, due to greatly suppressed electron-phonon scattering, QDIPs have the advantages of low dark current and long carrier lifetimes, which establish the potential for high temperature operation.
ISBN:4990247205
9784990247201
DOI:10.1109/IMNC.2004.245780