Development, characterization and integration of a novel boron nitride process for application as a Cu diffusion barrier

The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mech...

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Bibliographic Details
Published in2010 IEEE International Interconnect Technology Conference pp. 1 - 3
Main Authors Yi Chen, Spuller, Matthew, Balseanu, Mihaela, Zhenjiang Cui, Naik, Mehul, Li-Qun Xia
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
Boron
Copper
Curing
Dielectric breakdown
Dielectric constant
Dielectric materials
Etching
Mechanical factors
Monitoring
Tensile stress
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Summary:The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric copper barrier and etch stop.
ISBN:1424476763
9781424476763
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2010.5510730