Fabrication of Si3N4 Layers by Pulse Magnetron Sputtering Method

Amorphous silicon nitride thin layers are the most widely applied dielectric layers in modern semiconductor devices. It is caused by their excellent properties such as high chemical inertness, high thermal stability and corrosion resistance. Si 3 N 4 also has remarkable mechanical, optical and diele...

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Bibliographic Details
Published in2006 International Students and Young Scientists Workshop - Photonics and Microsystems pp. 39 - 40
Main Authors Macherzynski, W., Prociow, E., Paszkicwicz, B., Prazmowska, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2006
Subjects
Amorphous magnetic materials
Amorphous silicon
Chemical vapor deposition
Dielectric devices
Fabrication
Magnetic semiconductors
Semiconductor devices
Sputtering
Thermal resistance
Thermal stability
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Summary:Amorphous silicon nitride thin layers are the most widely applied dielectric layers in modern semiconductor devices. It is caused by their excellent properties such as high chemical inertness, high thermal stability and corrosion resistance. Si 3 N 4 also has remarkable mechanical, optical and dielectric properties. Silicon nitride thin layer can be fabricated by low-pressure chemical vapour deposition (LPCVD), plasma enhanced chemical vapour deposition (PECVD), reactive evaporation and ion beam deposition. More recently reactive sputtering techniques were proposed for Si 3 N 4 fabrication. We have applied the pulsed reactive magnetron sputtering of a Si target in nitrogen atmosphere for preparation of Si 3 N 4 layers. Parameters of the deposition process were examined. Their influence on layer properties was studied and discussed
ISBN:1424403928
9781424403929
ISSN:1939-4381
2576-9405
DOI:10.1109/STYSW.2006.343666