Thin Film Piezoelectric Aluminum Nitride for Piezoelectric Micromachined Ultrasonic Transducers

Piezoelectric aluminum nitride (AlN) thin film based piezoelectric micromachined ultrasonic transducers (PMUTs) are processed on 150 mm wafer diameter technology. The 300μm and 500 μm diameter membranes are arranged in a 3 by 3 array per chip. The membranes are actuated in resonance in air for chara...

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Bibliographic Details
Published in2018 IEEE SENSORS pp. 1 - 4
Main Authors Stoeckel, Chris, Meinel, Katia, Melzer, Marcel, Otto, Thomas
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2018
Subjects
AIN
aluminum nitride
PMUT
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Summary:Piezoelectric aluminum nitride (AlN) thin film based piezoelectric micromachined ultrasonic transducers (PMUTs) are processed on 150 mm wafer diameter technology. The 300μm and 500 μm diameter membranes are arranged in a 3 by 3 array per chip. The membranes are actuated in resonance in air for characterization. The PMUTs deflection is 1250 nm/V at 164.7 kHz for small signal actuation. For 1 V AC actuation the deflection in air is 530 nm/V, The relative change of impedance in resonance is 9.8 %.
ISSN:2168-9229
DOI:10.1109/ICSENS.2018.8589845