A 3-5 GHz UWB LNA with an active balun in 0.18 μm CMOS process

In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achie...

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Bibliographic Details
Published in2008 9th International Conference on Solid-State and Integrated-Circuit Technology pp. 1484 - 1487
Main Authors Ha Yong Jung, In Yong Hwang, Chan Hyeong Park
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
CMOS process
Gain
Impedance matching
Low-noise amplifiers
Noise figure
Numerical simulation
Power supplies
Resistors
Ultra wideband technology
Voltage
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Summary:In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. The differential voltage output of the balun is connected to a double-balanced mixer, which circuit has good performance for isolation.
ISBN:9781424421855
1424421853
DOI:10.1109/ICSICT.2008.4734827