The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications

In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of th...

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Published in2011 3rd IEEE International Memory Workshop (IMW) pp. 1 - 4
Main Authors Hyejung Choi, Jaeyun Yi, Sangmin Hwang, Sangkeum Lee, Seokpyo Song, Seunghwan Lee, Jaeyeon Lee, Donghee Son, Jinwon Park, Suk-Ju Kim, Ja-Yong Kim, Sunghoon Lee, Jiwon Moon, Choidong Kim, Jungwoo Park, Moonsig Joo, JaeSung Roh, Sungki Park, Sung-Woong Chung, Junghoon Rhee, Sung Joo Hong
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Arrays
Integrated circuits
Materials
Random access memory
Resistance
Switches
Tunneling
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Summary:In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a tunnel barrier has a benefit to reduce the switching current. In this paper, bipolar memory devices with oxides such as HfO x , ZrO x and AlO x as a tunnel barrier were fabricated with 40 ~ 80nm cell size. We showed that the switching current and inherent switching mechanism can be successfully controlled by proper tunnel barrier materials and stacks.
ISBN:1457702258
9781457702259
ISSN:2159-483X
DOI:10.1109/IMW.2011.5873243