Design of high-side MOSFET driver using discrete components for 24V operation

This paper presents the design of a high-side N-channel MOSFET driver using discrete components for 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. T...

Full description

Saved in:
Bibliographic Details
Published in2010 4th International Power Engineering and Optimization Conference (PEOCO) pp. 132 - 136
Main Authors Ali, R, Daut, I, Taib, S, Jamoshid, N S, Razak, A R A
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
Bootstrap circuit
Driver circuits
Floating MOSFET driver
H-bridge inverter design
High-side MOSFET driver
Inverters
level shifter
Logic gates
MOSFET circuits
Switches
Threshold voltage
Online AccessGet full text

Cover

More Information
Summary:This paper presents the design of a high-side N-channel MOSFET driver using discrete components for 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%.
ISBN:9781424471270
1424471273
DOI:10.1109/PEOCO.2010.5559191