Design of wideband power amplifier for GaN HEMT for two-way radio application
Power amplifier (PA) with wideband frequency application can greatly enhance user experience in wireless technology. In this paper, a methodology to design wideband power amplifier is introduced. Matching networks are designed by using real frequency technique (RFT) to provide the initial guess of t...
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Published in | 2016 IEEE Industrial Electronics and Applications Conference (IEACon) pp. 371 - 374 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.11.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Power amplifier (PA) with wideband frequency application can greatly enhance user experience in wireless technology. In this paper, a methodology to design wideband power amplifier is introduced. Matching networks are designed by using real frequency technique (RFT) to provide the initial guess of the elements of the matching networks. Inductance transformation into Coplanar Waveguide with Ground (CPWG) is implemented in this work and conversion of 2-port to 1-port is carried out as well for the serial connection of the network. Simulated results demonstrated an output power of around 14W, efficiency more than 50% and gain around 12 dB over the bandwidth of 100-2500 MHz. Layout design indicated the size is developed within small form factor and low cost implementation. |
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DOI: | 10.1109/IEACON.2016.8067407 |