Reducing Transient Enhanced Diffusion of Boron in Si/SiGe Heterojunction Bipolar Transistors by BBR3 Predeposition for External Base Doping

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Bibliographic Details
Published in28th European Solid-State Device Research Conference pp. 260 - 263
Main Authors Schmundt, H., Knoll, D., Heinemann, B., Schley, P., Winter, H., Kuck, B., Schlote, J., Blum, K., Kurps, R., Grabolla, T., Rucker, H., Tillack, B., Bolze, K.D.
Format Conference Proceeding
LanguageEnglish
Published Editions Frontieres 1998
Subjects
Bipolar transistors
Boron
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Implants
Physics
Semiconductor device doping
Silicon germanium
Voltage
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ISBN:9782863322345
2863322346