Cryogenic operation of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs

This work evaluates the operation of p-type Si 0.7 Ge 0.3 -on-insulator (SGOI) nanowires from room temperature down to 5.2K. Electrical characteristics are shown for long channel devices comparing narrow Ω-gate to quasi-planar MOSFETs (wide fin width). Results show oscillations in both transconducta...

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Bibliographic Details
Published in2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) pp. 1 - 4
Main Authors Paz, Bruna Cardoso, Pavanello, Marcelo Antonio, Casse, Mikael, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2018
Subjects
Cryogenics
Logic gates
low temperature
MOSFET
nanowire
Oscillators
pMOSFET
quantum confinement
SGOI
SiGe
SOI
Temperature dependence
Transconductance
transport
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Summary:This work evaluates the operation of p-type Si 0.7 Ge 0.3 -on-insulator (SGOI) nanowires from room temperature down to 5.2K. Electrical characteristics are shown for long channel devices comparing narrow Ω-gate to quasi-planar MOSFETs (wide fin width). Results show oscillations in both transconductance and gate to channel capacitance curves for temperatures smaller than 50K and fin width of 20nm due to quantum confinement effects. Improvement on the effective mobility for SGOI in comparison to SOI nanowires is still observed for devices with fin width scaled down to 20nm. Similar phonon-limited mobility contribution dependence on temperature is obtained for both narrow SGOI and SOI nanowires.
ISSN:2472-9132
DOI:10.1109/ULIS.2018.8354736