60GHz High Isolation SPDT MMIC switches using shunt pHEMT resonator

This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In order to improve the isolation, the shunt pHEMT resonator, which is reduced on-state resistance of FET, is proposed. The developed V-band SPDT switch shows an isolation of over 45...

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Bibliographic Details
Published in2008 IEEE MTT-S International Microwave Symposium Digest pp. 1541 - 1544
Main Authors Yoshihiro Tsukahara, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
Subjects
Frequency measurement
Insertion loss
line unified
Loss measurement
MMICs
Optical switches
pHEMT
PHEMTs
SPDT
switch
Switches
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Summary:This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In order to improve the isolation, the shunt pHEMT resonator, which is reduced on-state resistance of FET, is proposed. The developed V-band SPDT switch shows an isolation of over 45 dB and an insertion loss of 1.4 dB at 60 GHz. Input and output return losses are better than 18 dB in ON-state. Moreover, the switch requires no complex off-chip bias circuitry and consumes no DC power. These performances of high isolation and low insertion loss presented here are the best among the V-band pHEMT MMIC switches.
ISBN:1424417805
9781424417803
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2008.4633075