Towards vertical III-V nanowire devices on silicon

In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the vapor-liquid-solid (VLS) growth mechanism. In addition, the author discusses the fabrication and characterization of reproducible axial InP nanowire LED devices.

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Bibliographic Details
Published in2007 65th Annual Device Research Conference pp. 163 - 164
Main Authors Bakkers, E.P.A., Borgstrom, M.T., van den Einden, W., van Weert, M., Minot, E.D., Kelkensberg, F., van Kouwen, M., van Dam, J.A., Kouwenhoven, L.P., Zwiller, V., Helman, A., Wunnicke, O., Verheijen, M.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Crystallization
Epitaxial growth
Gallium arsenide
III-V semiconductor materials
Indium phosphide
Lattices
Nanoscale devices
Semiconductor device doping
Semiconductor impurities
Silicon
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Summary:In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the vapor-liquid-solid (VLS) growth mechanism. In addition, the author discusses the fabrication and characterization of reproducible axial InP nanowire LED devices.
ISBN:1424411017
9781424411016
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2007.4373699