Femtosecond laser annealing effects on indium oxide nanowire transistors

We report the effects of annealing of the metal contacts to the nanowires using femtosecond laser pulses focused on the contact regions. The annealing induces significant shifts in the threshold voltage, and significantly reduces the drain conductance (gdS) of the nanowire transistors in the saturat...

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Bibliographic Details
Published in2009 International Semiconductor Device Research Symposium pp. 1 - 2
Main Authors Seongmin Kim, Sunkook Kim, Chunghun Lee, Srisungsitthisunti, P., Pochiang Chen, Chongwu Zhou, Xianfan Xu, Minghao Qi, Mohammadi, S., Sanghyun Ju, Janes, D.B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2009
Subjects
Acoustical engineering
Annealing
Indium
Laser modes
Laser noise
Optical pulses
Schottky barriers
Semiconductor device noise
Semiconductor lasers
Ultrafast optics
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Summary:We report the effects of annealing of the metal contacts to the nanowires using femtosecond laser pulses focused on the contact regions. The annealing induces significant shifts in the threshold voltage, and significantly reduces the drain conductance (gdS) of the nanowire transistors in the saturation region, along with modest improvements in the subthreshold slopes. Low frequency (1/f) noise measurements in these devices reveal that Hooge's constant is reduced following laser annealing presumably due to improved channel-metal interface and lowered Schottky barrier height.
ISBN:1424460301
9781424460304
DOI:10.1109/ISDRS.2009.5378138