Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)
The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such...
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Published in | 2017 China Semiconductor Technology International Conference (CSTIC) pp. 1 - 3 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.03.2017
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Abstract | The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature (HLH) AlN buffer reducing the tensile stress in AlN consequently reduces the RF loss. |
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AbstractList | The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature (HLH) AlN buffer reducing the tensile stress in AlN consequently reduces the RF loss. |
Author | Chang, Shane Lumbantoruan, Franky Yen-Teng Ho Yen-Yu Chen Tien Tung Luong Chang, Edward-Yi Yueh-Chin Lin |
Author_xml | – sequence: 1 surname: Tien Tung Luong fullname: Tien Tung Luong email: tungluongties@nctu.edu.tw organization: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan – sequence: 2 givenname: Franky surname: Lumbantoruan fullname: Lumbantoruan, Franky organization: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan – sequence: 3 surname: Yen-Yu Chen fullname: Yen-Yu Chen organization: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan – sequence: 4 surname: Yen-Teng Ho fullname: Yen-Teng Ho organization: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan – sequence: 5 surname: Yueh-Chin Lin fullname: Yueh-Chin Lin organization: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan – sequence: 6 givenname: Shane surname: Chang fullname: Chang, Shane organization: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan – sequence: 7 givenname: Edward-Yi surname: Chang fullname: Chang, Edward-Yi organization: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan |
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Snippet | The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the... |
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SubjectTerms | Area measurement Frequency measurement HEMTs Loss measurement MODFETs Radio frequency Silicon |
Title | Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111) |
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