Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)

The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such...

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Bibliographic Details
Published in2017 China Semiconductor Technology International Conference (CSTIC) pp. 1 - 3
Main Authors Tien Tung Luong, Lumbantoruan, Franky, Yen-Yu Chen, Yen-Teng Ho, Yueh-Chin Lin, Chang, Shane, Chang, Edward-Yi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
Area measurement
Frequency measurement
HEMTs
Loss measurement
MODFETs
Radio frequency
Silicon
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Summary:The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature (HLH) AlN buffer reducing the tensile stress in AlN consequently reduces the RF loss.
DOI:10.1109/CSTIC.2017.7919884