Development of solution-derived diffusion barrier layer for back-contact crystalline silicon solar cell

In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO 2 diffusion barrier layer in this study. The thickness and refractive index of SiO 2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement...

Full description

Saved in:
Bibliographic Details
Published in2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) pp. 1 - 2
Main Authors Yunjian Jiang, Ishikawa, Yasuaki, Yoshinaga, Seiya, Honda, Tatsuki, Uraoka, Yukiharu
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
back-contact silicon solar cell
Boron
Coatings
diffusion barrier
Electrical resistance measurement
Photovoltaic cells
polysilazane coating
process cost
Refractive index
Silicon
Online AccessGet full text

Cover

More Information
Summary:In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO 2 diffusion barrier layer in this study. The thickness and refractive index of SiO 2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO 2 layer presents excellent barrier effect for boron and phosphorous diffusion process, while SiO 2 deposited by plasma chemical vapor deposition is available for only phosphorous diffusion process.
ISBN:1479936146
9781479936144
DOI:10.1109/IMFEDK.2014.6867047