A piezoresistive accelerometer with axially stressed tiny beams for both much increased sensitivity and much broadened frequency bandwidth

A single-wafer-based piezoresistive accelerometer, consisting of two axially stressed tiny beams and a central bending cantilever, has been proposed for both much improved sensitivity and bandwidth compared with conventional piezoresistive accelerometers. Analytical modeling has been studied for opt...

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Published inTRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Vol. 1; pp. 91 - 94 vol.1
Main Authors Shusen Huang, Xinxin Li, Yuelin Wang, Jiwei Jiao, Xiaohong Ge, Deren Lu, Lufeng Che, Kun Zhang, Bin Xiong
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Accelerometers
Analytical models
Bandwidth
Design optimization
Finite element methods
Frequency
Piezoresistance
Semiconductor device modeling
Sensor phenomena and characterization
Structural beams
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Summary:A single-wafer-based piezoresistive accelerometer, consisting of two axially stressed tiny beams and a central bending cantilever, has been proposed for both much improved sensitivity and bandwidth compared with conventional piezoresistive accelerometers. Analytical modeling has been studied for optimized design and scaling rules of the sensors. Finite element method (FEM) simulation results agree well with the analyses. The accelerometers are fabricated in silicon-on-insulator (SOI) wafer by using bulk micromachining techniques including deep-reactive-ionic-etch (DRIE). The formed devices are characterized with typical sensitivity as 106 mv/5v/g and 1/sup st/ mode resonant frequency as 1115 Hz, 10.6 and 2.23 times equivalent to the specifications of a typical conventional cantilever-mass piezoresistive accelerometer.
ISBN:9780780377318
0780377311
DOI:10.1109/SENSOR.2003.1215260