Optical properties and evaluation of localized level in gap of In-Ga-Zn-O thin film

Recent studies have shown that an indium gallium zinc oxide (In-Ga-Zn-O: IGZO) thin film is affected by light irradiation in a variety of ways. Such photoresponse properties are considered to result from deep defect levels in the band gap of IGZO, and the defect levels need to be reduced in order to...

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Published in2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 143 - 146
Main Authors Ishihara, N., Tsubuku, M., Nonaka, Y., Watanabe, R., Inoue, K., Shishido, H., Kato, K., Yamazaki, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2012
Subjects
Absorption
Energy measurement
Optical variables measurement
Semiconductor device measurement
Temperature measurement
Threshold voltage
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Summary:Recent studies have shown that an indium gallium zinc oxide (In-Ga-Zn-O: IGZO) thin film is affected by light irradiation in a variety of ways. Such photoresponse properties are considered to result from deep defect levels in the band gap of IGZO, and the defect levels need to be reduced in order to improve the reliability of IGZO. The deep defect levels were measured by low-temperature photoluminescence (low-temperature PL) and a constant photocurrent method (CPM), and the density of states was determined by CPM. As a result, the density of states of the manufactured IGZO film is sufficiently reduced. In addition, an IGZO-FET manufactured through a similar process has sufficient stability against light.
ISBN:9781467303996
1467303992