A cross point Cu-ReRAM with a novel OTS selector for storage class memory applications

This paper demonstrates a cross point Cu based Resistive Random Access Memory (Cu-ReRAM) technology suitable for Storage Class Memory (SCM) applications. Two key technologies have been developed for large capacity of 100Gb-class SCM with 100 ns program speed and 10M cycles of program endurance. One...

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Bibliographic Details
Published in2017 Symposium on VLSI Technology pp. T30 - T31
Main Authors Yasuda, Shuichiro, Ohba, Kazuhiro, Mizuguchi, Tetsuya, Sei, Hiroaki, Shimuta, Masayuki, Aratani, Katsuhisa, Shiimoto, Tsunenori, Yamamoto, Tetsuya, Sone, Takeyuki, Nonoguchi, Seiji, Okuno, Jun, Kouchiyama, Akira, Otsuka, Wataru, Tsutsui, Keiichi
Format Conference Proceeding
LanguageEnglish
Published JSAP 01.06.2017
Subjects
Electrodes
Leakage currents
Resistance
Switches
Threshold voltage
Transistors
Very large scale integration
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Summary:This paper demonstrates a cross point Cu based Resistive Random Access Memory (Cu-ReRAM) technology suitable for Storage Class Memory (SCM) applications. Two key technologies have been developed for large capacity of 100Gb-class SCM with 100 ns program speed and 10M cycles of program endurance. One is tight resistance distributions of Cu-ReRAM by inserting a barrier layer to prevent excess intermixing. The other is a novel Boron and Carbon (BC) based Ovonic Threshold Switch (OTS) selector which meets requirements for large cross point arrays with low leakage current, low threshold voltage variability, and high endurance.
ISSN:2158-9682
DOI:10.23919/VLSIT.2017.7998189