Reliability study of 90nm CMOS inverter

• Published in: 2010 International Conference on Enabling Science and Nanotechnology (ESciNano) pp. 1 - 3
• Main Authors: Abdul Hadi, Dayanasari, Soin, N, Wan Muhamad Hatta, S F
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2010

It is well-known that the miniaturization or scaling down process of integrated circuits (ICs) has lead to the reliability issues such as Hot-Carrier (HC) and Negative Bias Temperature Instability (NBTI) effects which are very significant on p-type MOSFET. A negative voltage is applied to the gate o...