A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous

This paper presents a 400 H ×256 V pixel CMOS image sensor including 128 on-chip memory/pixel with 1Tpixel/s in burst operation without cooling and 780Mpixel/s in continuous operation. To improve the read-out speed from the chip, a noise-reduction circuit in pixel and relay buffers is introduced.

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Bibliographic Details
Published in2012 IEEE International Solid-State Circuits Conference pp. 382 - 384
Main Authors Tochigi, Y., Hanzawa, K., Kato, Y., Kuroda, R., Mutoh, H., Hirose, R., Tominaga, H., Takubo, K., Kondo, Y., Sugawa, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.02.2012
Subjects
Analog memory
Capacitors
CMOS image sensors
Noise
Switching circuits
Timing
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Summary:This paper presents a 400 H ×256 V pixel CMOS image sensor including 128 on-chip memory/pixel with 1Tpixel/s in burst operation without cooling and 780Mpixel/s in continuous operation. To improve the read-out speed from the chip, a noise-reduction circuit in pixel and relay buffers is introduced.
ISBN:1467303763
9781467303767
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2012.6177046