High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films

Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transist...

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Bibliographic Details
Published in2009 Device Research Conference pp. 133 - 134
Main Authors Helin Cao, Qingkai Yu, Childres, I., Pei, S.S., Chen, Y.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2009
Subjects
Electron optics
Etching
FETs
Large-scale systems
Nanotechnology
Optical films
Optical microscopy
Physics computing
Semiconductor films
Thin film transistors
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Summary:Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transistors (GFET) made from exfoliated (from bulk graphite) or epitaxially-grown (by surface decomposition of SiC) graphene layers can show electron and hole mobilities approaching 104 cm2/Vs or higher.
ISBN:9781424435289
1424435285
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2009.5354876