Design and fabrication of quantum cascade laser structure based on III-Nitride semiconductors in the THz frequency range

We performed the design and fabrication of a resonant phonon-type quantum cascade structure using III-Nitride semiconductors for emission in the 5 to 12 terahertz frequency range. We could design a quantum cascade structure in which population inversion could be obtained by making calculations based...

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Bibliographic Details
Published in2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves pp. 1 - 2
Main Authors Terashima, W., Hirayama, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
Gallium
Materials
Mathematical model
Metals
Phonons
Quantum cascade lasers
Scattering
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Summary:We performed the design and fabrication of a resonant phonon-type quantum cascade structure using III-Nitride semiconductors for emission in the 5 to 12 terahertz frequency range. We could design a quantum cascade structure in which population inversion could be obtained by making calculations based on a self-consistent rate equation model. We also successfully fabricated the designed quantum cascade structure by radio-frequency molecular beam epitaxy.
ISBN:1424421195
9781424421190
ISSN:2162-2027
DOI:10.1109/ICIMW.2008.4665723