Ultrathin InAs-channel MOSFETs on Si substrates

Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were...

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Bibliographic Details
Published in2015 International Symposium on VLSI Technology, Systems and Applications pp. 1 - 2
Main Authors Cheng-Ying Huang, Xinyu Bao, Zhiyuan Ye, Sanghoon Lee, Hanwei Chiang, Haoran Li, Chobpattana, Varistha, Thibeault, Brian, Mitchell, William, Stemmer, Susanne, Gossard, Arthur, Sanchez, Errol, Rodwell, Mark
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2015
Subjects
III-V semiconductor materials
Indium gallium arsenide
Indium phosphide
Logic gates
MOSFET
Silicon
Substrates
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Summary:Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm L g show high transconductance, ~2.0 mS/μm at V DS =0.5V.
ISSN:1524-766X
2690-8174
DOI:10.1109/VLSI-TSA.2015.7117566