Ultrathin InAs-channel MOSFETs on Si substrates
Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were...
Saved in:
Published in | 2015 International Symposium on VLSI Technology, Systems and Applications pp. 1 - 2 |
---|---|
Main Authors | , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.04.2015
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm L g show high transconductance, ~2.0 mS/μm at V DS =0.5V. |
---|---|
ISSN: | 1524-766X 2690-8174 |
DOI: | 10.1109/VLSI-TSA.2015.7117566 |