Enabling wireless communications with state-of-the-art RF CMOS and SiGe BiCMOS technologies

• Published in: 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks pp. 115 - 118
• Main Authors: Chu, S.F., Chew, K.W., Verma, P.R., Ng, C.H., Cheng, C.H., Toledo, N.G., Yoo, Y.K., Loh, W.B., Leong, K.C., Zhang, S.Q., Oon, B.G., Poh, Y.W., Zhou, T., Khu, K.K., Lim, S.F.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; inductors; Linearity; MIM capacitors; mismatch; MOS varactors; Radio frequency; RF CMOS; scalable models; Semiconductor device modeling; SiGe BiCMOS; Silicon germanium; statistical models; System-on-a-chip; VPP capacitors; Wireless communication
• ISBN: 9780780393721; 0780393724
• DOI: 10.1109/RFIT.2005.1598888

The choice of technology for today's mixed-signal/RF system-on-chip (SOC) designs has been driven by the performance enhancements and cost advantage derived from scaled CMOS technologies. This paper discusses the performance improvements of RF transistors resulting from technology downscaling. Comparisons between scaled RF CMOS and SiGe BiCMOS technologies to highlight the benefits of employing SiGe HBT devices in certain applications are made. Other technology enablements discussed include accurate, scalable models and statistical models to address the need for design flexibility and robust manufacturing. Thereafter the introduction of high Q inductors, high density capacitors and varactors as basic passive components for RF circuits are discussed. Analog requirements such as mismatch, temperature linearity and voltage linearity are also discussed.