AlGaN/GaN HEMTs on Diamond Substrate

• Published in: 2007 65th Annual Device Research Conference pp. 31 - 32
• Main Authors: Dumka, D.C., Saunier, P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2007
• Subjects: Aluminum gallium nitride; Chemical vapor deposition; Gallium nitride; HEMTs; MODFETs; Power transistors; Silicon carbide; Substrates; Thermal conductivity; Thermal management

In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposit...