AlGaN/GaN HEMTs on Diamond Substrate
In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposit...
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Published in | 2007 65th Annual Device Research Conference pp. 31 - 32 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2007
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Subjects | |
Online Access | Get full text |
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