AlGaN/GaN HEMTs on Diamond Substrate
In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposit...
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Published in | 2007 65th Annual Device Research Conference pp. 31 - 32 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2007
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposition (CVD). It is concluded that these are the best-reported results for a transistor using GaN on diamond material. |
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ISBN: | 1424411017 9781424411016 |
ISSN: | 1548-3770 2640-6853 |
DOI: | 10.1109/DRC.2007.4373637 |