AlGaN/GaN HEMTs on Diamond Substrate

In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposit...

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Bibliographic Details
Published in2007 65th Annual Device Research Conference pp. 31 - 32
Main Authors Dumka, D.C., Saunier, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Aluminum gallium nitride
Chemical vapor deposition
Gallium nitride
HEMTs
MODFETs
Power transistors
Silicon carbide
Substrates
Thermal conductivity
Thermal management
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Summary:In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposition (CVD). It is concluded that these are the best-reported results for a transistor using GaN on diamond material.
ISBN:1424411017
9781424411016
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2007.4373637