Highly sensitive CMOS passive wake-up circuit

We implement a passive wake-up circuit with high voltage sensitivity using standard CMOS technology. We propose voltage multipliers and inverter chain optimized for high voltage sensitivity. The wake-up circuit converts small RF input signals into a DC signal to trigger the interrupt. Using an RF in...

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Bibliographic Details
Published in2008 Asia-Pacific Microwave Conference pp. 1 - 4
Main Authors Hanjin Cho, Hyungchul Kim, Yao Xi, Minsu Kim, Sungwook Kwon, Tajun Park, Haksun Kim, Youngoo Yang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2008
Subjects
Circuits
CMOS process
CMOS technology
Inverters
Protection
Radio frequency
RF signals
Schottky diodes
Threshold voltage
Wireless sensor networks
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Summary:We implement a passive wake-up circuit with high voltage sensitivity using standard CMOS technology. We propose voltage multipliers and inverter chain optimized for high voltage sensitivity. The wake-up circuit converts small RF input signals into a DC signal to trigger the interrupt. Using an RF input signal, whose center frequency is 870 MHz and input power is -29.3 dBm, we achieved an output voltage of 0.7 V, enough to trigger on the output. The fully integrated CMOS IC is fabricated using a 0.18 mum standard CMOS process. The chip area is as small as 230 times 190 mum 2 .
ISBN:9781424426416
1424426413
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2008.4958344