An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands

An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands is presented. To achieve frequency-tunable and multiple bandstop performance, multiple varactor-tuned LC-tank circuits are cascaded in a stacked form between emitters of the differential transistor-pair. The stac...

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Bibliographic Details
Published in2008 European Conference on Wireless Technology pp. 151 - 154
Main Authors Shirata, M., Shinohara, T., Sato, M., Itoh, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Circuits
Differential amplifiers
Diodes
Filters
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
L-band
Silicon germanium
Varactors
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Summary:An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands is presented. To achieve frequency-tunable and multiple bandstop performance, multiple varactor-tuned LC-tank circuits are cascaded in a stacked form between emitters of the differential transistor-pair. The stacked multiple LC-tanks have an outstanding feature in that bandstop frequencies can be varied independently. The implemented 0.35 mum SiGe HBT amplifier with dual stopbands demonstrates an averaged bandstop performance of 13.3 dB over 0.5 to 0.8 GHz and 14.3 dB across 0.6 to 1.1 GHz. The input and output return losses are better than 17.5 dB and 11 dB over 0.2 to 1.5 GHz, respectively. The measured P 1dB is +3 dBm and IIP 3 is 0 dBm with V cc = 6 V and I c = 8 mA.
ISBN:2874870080
9782874870088