A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge

To reduce TSV coupling noise, a new guard-ring technique is proposed and implemented experimentally. We design the n + /n - well guard-ring butted to the TSV dielectric surrounding the TSV and utilize the inversion layer induced by a positive interface charge as a shield layer. The interface trap de...

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Bibliographic Details
Published in2013 Symposium on VLSI Technology pp. T44 - T45
Main Authors Kyung-Do Kim, Min-Kyu Jeong, Sung-Min Cho, Ho-Jung Kang, Byung-Jun Jun, Jae-Bum Kim, Kang-Sik Choi, Seon-Yong Cha, Jung-Hoon Lee, Jae-Goan Jeong, Sung-Joo Hong, Jong-Ho Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2013
Subjects
Capacitance-voltage characteristics
Couplings
Current measurement
Dielectrics
Noise
Substrates
Through-silicon vias
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Summary:To reduce TSV coupling noise, a new guard-ring technique is proposed and implemented experimentally. We design the n + /n - well guard-ring butted to the TSV dielectric surrounding the TSV and utilize the inversion layer induced by a positive interface charge as a shield layer. The interface trap density responsible for the interface charge between the TSV dielectric and Si substrate was extracted. Proposed technique reduces the coupling noise by ~3 times.
ISBN:9781467352260
1467352268
ISSN:0743-1562