Novel emitter controlled diode with copper metallization in ultrathin wafer technology: Setting a performance benchmark
Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown.
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Published in | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) pp. 121 - 122 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEJ
01.05.2017
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Subjects | |
Online Access | Get full text |
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Abstract | Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown. |
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AbstractList | Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown. |
Author | Schloegl, D. Haertl, A. Rodriguez, F.J. Santos Pfaffenlehner, M. Stegner, A.R. Hille, F. Brandt, P.C. |
Author_xml | – sequence: 1 givenname: F.J. Santos surname: Rodriguez fullname: Rodriguez, F.J. Santos email: francisco.santosrodriguez@infineon.com organization: Infineon Technologies Austria AG, Villach, Austria – sequence: 2 givenname: D. surname: Schloegl fullname: Schloegl, D. organization: Infineon Technologies Austria AG, Villach, Austria – sequence: 3 givenname: F. surname: Hille fullname: Hille, F. organization: Infineon Technologies AG, Munich, Germany – sequence: 4 givenname: P.C. surname: Brandt fullname: Brandt, P.C. organization: Infineon Technologies AG, Munich, Germany – sequence: 5 givenname: M. surname: Pfaffenlehner fullname: Pfaffenlehner, M. organization: Infineon Technologies AG, Munich, Germany – sequence: 6 givenname: A.R. surname: Stegner fullname: Stegner, A.R. organization: Infineon Technologies AG, Munich, Germany – sequence: 7 givenname: A. surname: Haertl fullname: Haertl, A. email: andreas.haertl@infineon.com organization: Infineon Technologies AG, Munich, Germany |
BookMark | eNo1kM1OwzAQhM2fRFv6BL34BVLsJHZsbqgUqFQBUnvgVjn2pjE4dpUaqvL0WKKcdrTz7Y40Q3TpgweEJpRM80JSebtYva0epjmh1bSSQsiSnqGxrEQpBBecSM7O0YDKkmckQRdo-G-U79douN9_EMIKyugAHV7CNzgMnY0ReqyDj31wDgw2NhjABxvbtN3tktlBVM7ZHxVt8Nh6_OVir2Kb1EE1CYigWx9c2B7v8ApitH6LFU6nTeg75TXgGrxuO9V_3qCrRrk9jE9zhNaP8_XsOVu-Pi1m98vMShKzWhnDTZkTqWvOc81AmkZyTerGgFZaVKbQtWy0YcDKpHXOQHMlKmEUNXUxQpO_txYANrvepuzj5tRZ8QsdD2X3 |
ContentType | Conference Proceeding |
DBID | 6IE 6IH CBEJK RIE RIO |
DOI | 10.23919/ISPSD.2017.7988941 |
DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan (POP) 1998-present by volume IEEE Xplore All Conference Proceedings IEEE Electronic Library (IEL) IEEE Proceedings Order Plans (POP) 1998-present |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISBN | 9784886860965 4886860966 |
EISSN | 1946-0201 |
EndPage | 122 |
ExternalDocumentID | 7988941 |
Genre | orig-research |
GroupedDBID | -~X 29P 6IE 6IH 6IL 6IN ABLEC ADZIZ AFFNX ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK CHZPO IEGSK IJVOP JC5 OCL RIE RIL RIO |
ID | FETCH-LOGICAL-i90t-badd6d4209cb662c5e9df96c0bfdecac87d3cb9fcd5e54d3cc25ec6a878da1db3 |
IEDL.DBID | RIE |
ISBN | 488686094X 9784886860941 |
IngestDate | Wed Jun 26 19:27:05 EDT 2024 |
IsPeerReviewed | false |
IsScholarly | true |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-i90t-badd6d4209cb662c5e9df96c0bfdecac87d3cb9fcd5e54d3cc25ec6a878da1db3 |
PageCount | 2 |
ParticipantIDs | ieee_primary_7988941 |
PublicationCentury | 2000 |
PublicationDate | 2017-May |
PublicationDateYYYYMMDD | 2017-05-01 |
PublicationDate_xml | – month: 05 year: 2017 text: 2017-May |
PublicationDecade | 2010 |
PublicationTitle | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) |
PublicationTitleAbbrev | ISPSD |
PublicationYear | 2017 |
Publisher | IEEJ |
Publisher_xml | – name: IEEJ |
SSID | ssj0053151 |
Score | 2.065351 |
Snippet | Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper... |
SourceID | ieee |
SourceType | Publisher |
StartPage | 121 |
SubjectTerms | freewheeling diode ultrathin wafer |
Title | Novel emitter controlled diode with copper metallization in ultrathin wafer technology: Setting a performance benchmark |
URI | https://ieeexplore.ieee.org/document/7988941 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3JbsIwELUop_bSBaru8qHHBrLZsXtti2glEBJU4oZieywQSxBKitSvr52E0FY99DZxpGRkjzL25L03CN2HEiRoRR3hSeKEQJjDpE8c8LUXmIymlLalgV6fdt_DtzEZ19BDxYUBgBx8Bi1r5v_yVSIzWyprW20tblnqB8z1C67W7qtrQol45tRl4pEyas4spbpOde0VkkN-wD3efh0Ohs8W1xW1ymf-aK6S55bOMertvCogJfNWloqW_Pwl2Phft09Qc8_iw4MqP52iGqzO0NE3AcIG2vaTD1hgWM4sqQeXuPUFKKxmiQJsq7RmdL02N5dg9umLkraJZyucLayy7dRY29i8D6dVlf4RDyHHU-MYr_fMBCyMT9NlvJk30ajzMnrqOmUrBmfG3dQRsW08Ffoul4JSXxLgSnMqXaEVyFiySAVScC0VARIa2yw3SBqziKnYUyI4R_VVsoILhJnWnssEQN7pJCacCeoqLlxNRUQUv0QNO4OTdSG2MSkn7-rv4Wt0aFexQCDeoHq6yeDW7BJScZeHxxea5r8m |
link.rule.ids | 310,311,786,790,795,796,802,27956,55107 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LTwIxEG4IHtSLDzC-7cGjC_tqt_WqElAgJGDCjWzbaSA8QxZJ_PW2uwuo8eBttpvsTtrJTjv7fd8gdB9KkKAVdYQniRMCYQ6TPnHA115gMppS2pYGWm1afw9f-6RfQA9bLgwApOAzqFgz_Zev5nJlS2VVq63FLUt9z-R5N8rYWpvvrgkm4plzl4lIyqg5teT6OttrLxMd8gPu8Wqj2-k-W2RXVMmf-qO9SppdakeotfErA5WMK6tEVOTnL8nG_zp-jMo7Hh_ubDPUCSrA7BQdfpMgLKF1e_4BEwzTkaX14By5PgGF1WiuANs6rRldLMzNKZid-iQnbuLRDK8mVtt2aKx1bN6Hk22d_hF3IUVU4xgvdtwELIxPw2m8HJdRr_bSe6o7eTMGZ8TdxBGxbT0V-i6XglJfEuBKcypdoRXIWLJIBVJwLRUBEhrbLDhIGrOIqdhTIjhDxdl8BucIM609lwmAtNdJTDgT1FVcuJqKiCh-gUp2BgeLTG5jkE_e5d_Dd2i_3ms1B81G--0KHdgVzfCI16iYLFdwY_YMibhNQ-UL1WXCeg |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=2017+29th+International+Symposium+on+Power+Semiconductor+Devices+and+IC%27s+%28ISPSD%29&rft.atitle=Novel+emitter+controlled+diode+with+copper+metallization+in+ultrathin+wafer+technology%3A+Setting+a+performance+benchmark&rft.au=Rodriguez%2C+F.J.+Santos&rft.au=Schloegl%2C+D.&rft.au=Hille%2C+F.&rft.au=Brandt%2C+P.C.&rft.date=2017-05-01&rft.pub=IEEJ&rft.isbn=488686094X&rft.eissn=1946-0201&rft.spage=121&rft.epage=122&rft_id=info:doi/10.23919%2FISPSD.2017.7988941&rft.externalDocID=7988941 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9784886860941/lc.gif&client=summon&freeimage=true |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9784886860941/mc.gif&client=summon&freeimage=true |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9784886860941/sc.gif&client=summon&freeimage=true |