Advanced integration of variability and degradation in RRAM SPICE compact models

Variability and degradation in RRAM devices involve complex physical mechanisms that depend on the device, environment and programming/read operation. The development of solid and accurate compact models, ready to be used in standard circuit simulators, requires the meticulous emulation of this kind...

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Bibliographic Details
Published in2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) pp. 1 - 4
Main Authors Garcia-Redondo, Fernando, Lopez-Vallejo, Marisa, Lopez Barrio, Carlos
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2017
Subjects
Adaptation models
Circuit Simulation
Degradation
Endurance
Hardware design languages
Integrated circuit modeling
Mathematical model
Memristor
Reliability
ReRAM
RRAM
SPICE
Stress
Variability
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Summary:Variability and degradation in RRAM devices involve complex physical mechanisms that depend on the device, environment and programming/read operation. The development of solid and accurate compact models, ready to be used in standard circuit simulators, requires the meticulous emulation of this kind of non-ideal effects. In this work we present an advanced approach for the emulation of complex variability and degradation effects in SPICE compacts models. Without requiring compiled components - such as Verilog-A or CMI code - the proposed solution can be adapted to any kind of memristor model providing full support to the emulation of these intricate behaviors. Thorough experiments illustrate the capabilities of the presented approach. There, we make use of a physical SPICE model that emulates behavioral dependence on the device cycling, simulation time and stress levels. After applying the proposed techniques, we obtain an enhanced model properly aware of the device's non-ideal behavior.
DOI:10.1109/SMACD.2017.7981597