10.3: Nanodiamond vacuum field emission transistor arrays

A vertically configured nanodiamond vacuum field emission transistor (VFET) is developed. The device is fabricated on a silicon-on-insulator (SOI) substrate, using the active silicon layer patterned with inverted pyramidal mold for nanodiamond deposition and as the self-aligned gate of the final VFE...

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Bibliographic Details
Published inInternational Vacuum Nanoelectronics Conference pp. 201 - 202
Main Authors Shao-Hua Hsu, Weng Poo Kang, Davidson, Jimmy L
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2010
Subjects
Anodes
Logic gates
Nanodiamond
Nanoscale devices
Nitrogen
Performance evaluation
Silicon
Transistor characteristics
Transistors
Vacuum field emission devices
Vertically configured emitter
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Summary:A vertically configured nanodiamond vacuum field emission transistor (VFET) is developed. The device is fabricated on a silicon-on-insulator (SOI) substrate, using the active silicon layer patterned with inverted pyramidal mold for nanodiamond deposition and as the self-aligned gate of the final VFET construct. Gate modulation of the emission current is observed with a relatively low gate turn-on voltage. The I a -V g -V a characteristics of the device show distinct linear, saturation and cutoff regions, demonstrating the transistor behaviors. The VFET shows a high dc voltage gain of ~ 1000, an ac voltage gain of ~ 44 and a phase shift of 180° when operated as a voltage amplifier. This nanodiamond VFET promises potential applications in vacuum microelectronics, including integrated circuits.
ISBN:1424478898
9781424478897
ISSN:2164-2370
DOI:10.1109/IVNC.2010.5563234