Microfabrication of ZnO structures using sol-gel immerse technique

Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrat...

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Published in2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) pp. 171 - 174
Main Authors Kamaruddin, S A, Sahdan, M Z, Kah-Yoong Chan, Ho-Kwang Yow, Jian-Wei Hoon, Mahmood, M R, Saim, H
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
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Summary:Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrates. Different precursor's concentrations ranging from 0.0001 M to 0.01 M (M=molarity) using zinc nitrate hexahydrate [Zn(NO 3 ) 2 .6H 2 O] and hexamethylenetetramine [C 6 H 12 N 4 ] were employed in the synthesis of the ZnO nanostructures. The surface morphologies were examined using scanning electron microscope (SEM) and the structural properties were measured using X-ray diffractometer (XRD). In order to investigate the optical properties, the ZnO nanostructures were measured using ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the ZnO nanostructures were characterized using current-voltage (I-V) measurement system.
ISBN:9781424466085
1424466083
DOI:10.1109/SMELEC.2010.5549531