Super junction MOSFET in power factor correction converters

The aim of this paper is to investigate the performances of a novel Super Junction (SJ) MOSFET in a PFC converter application. The MOSFET device has a SJ structure with deep trenches to lower the on state resistance per unit area. The area of application is in the field of DC-DC single-switch conver...

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Bibliographic Details
Published in2017 AEIT International Annual Conference pp. 1 - 6
Main Authors Musumeci, S., Portoghese, F., Raciti, A., Gaito, A., Murabito, D., Scollo, R.
Format Conference Proceeding
LanguageEnglish
Published AEIT 01.09.2017
Subjects
boost converter
deep trench
Junctions
MOSFET
Performance evaluation
PFC
power devices
power losses
Reactive power
Super Junction MOSFET
Switches
switching converters
Switching frequency
Temperature measurement
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Summary:The aim of this paper is to investigate the performances of a novel Super Junction (SJ) MOSFET in a PFC converter application. The MOSFET device has a SJ structure with deep trenches to lower the on state resistance per unit area. The area of application is in the field of DC-DC single-switch converters, and bridge conversion with zero voltage switching. The improved design leads to a noticeable conduction losses reduction with high performances during the switching transients. The technological issues of the improved MOSFET device are treated and discussed. An extended characterization of the deep trench SJ MOSFET on an experimental 2.5 kW boost converter is carried out, showing the high dynamic performances and the thermal behavior on the application of the device.
DOI:10.23919/AEIT.2017.8240537