A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves

• Published in: 2008 IEEE MTT-S International Microwave Symposium Digest pp. 1409 - 1412
• Main Authors: Reynoso-Hernandez, J.A., Zuniga-Juarez, J.E., Zarate-de Landa, Andres
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2008
• Subjects: AlGaN/GaN HEMTs; Electrical resistance measurement; Extrema points; Gallium nitride; HEMTs; Logic gates; Mathematical model; MODFETs; parasitic elements; small-signal equivalent circuit; Transistors

This paper presents a new method for calculating the gate resistance R g and inductance L g , of GaN HEMTs. The method consists in forward biasing the gate with low I gs currents (I gs ≫0; 0≪V gs ≪V bi ; drain open) and is based on the extrema of Z 11 curves. R g and L g are determined from the extr...