A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves
This paper presents a new method for calculating the gate resistance R g and inductance L g , of GaN HEMTs. The method consists in forward biasing the gate with low I gs currents (I gs ≫0; 0≪V gs ≪V bi ; drain open) and is based on the extrema of Z 11 curves. R g and L g are determined from the extr...
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Published in | 2008 IEEE MTT-S International Microwave Symposium Digest pp. 1409 - 1412 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2008
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Subjects | |
Online Access | Get full text |
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Summary: | This paper presents a new method for calculating the gate resistance R g and inductance L g , of GaN HEMTs. The method consists in forward biasing the gate with low I gs currents (I gs ≫0; 0≪V gs ≪V bi ; drain open) and is based on the extrema of Z 11 curves. R g and L g are determined from the extrema of Z 11 curves measured (after conversion of S to Z parameters) at single DC gate forward current. This new method differs from those previously published [3,6] in that it avoids the use of the resonance frequency in the imaginary part of Z 11 and the large DC gate forward current. The good agreement between experimental and model data confirms the validity of the proposed method. |
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ISBN: | 1424417805 9781424417803 |
ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.2008.4633042 |