A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves

This paper presents a new method for calculating the gate resistance R g and inductance L g , of GaN HEMTs. The method consists in forward biasing the gate with low I gs currents (I gs ≫0; 0≪V gs ≪V bi ; drain open) and is based on the extrema of Z 11 curves. R g and L g are determined from the extr...

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Bibliographic Details
Published in2008 IEEE MTT-S International Microwave Symposium Digest pp. 1409 - 1412
Main Authors Reynoso-Hernandez, J.A., Zuniga-Juarez, J.E., Zarate-de Landa, Andres
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
Subjects
AlGaN/GaN HEMTs
Electrical resistance measurement
Extrema points
Gallium nitride
HEMTs
Logic gates
Mathematical model
MODFETs
parasitic elements
small-signal equivalent circuit
Transistors
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Summary:This paper presents a new method for calculating the gate resistance R g and inductance L g , of GaN HEMTs. The method consists in forward biasing the gate with low I gs currents (I gs ≫0; 0≪V gs ≪V bi ; drain open) and is based on the extrema of Z 11 curves. R g and L g are determined from the extrema of Z 11 curves measured (after conversion of S to Z parameters) at single DC gate forward current. This new method differs from those previously published [3,6] in that it avoids the use of the resonance frequency in the imaginary part of Z 11 and the large DC gate forward current. The good agreement between experimental and model data confirms the validity of the proposed method.
ISBN:1424417805
9781424417803
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2008.4633042