Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs

This paper focuses on the effect of deep trench isolation (DTI) on self-heating and electrical performances of state-of-the-art SiGeC heterojunction bipolar transistors (HBTs). The influence of DTI on the heat dissipation and on the thermal resistance of HBTs is studied both with electrical measurem...

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Published inProceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 pp. 129 - 132
Main Authors Barbalat, B., Schwartzmann, T., Chevalier, P., Jagueneau, T., Vandelle, B., Rubaldo, L., Saguin, F., Zerounian, N., Aniel, F., Chantre, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Bipolar transistors
Diffusion tensor imaging
Electric resistance
Electrical resistance measurement
Epitaxial growth
Fabrication
Heterojunction bipolar transistors
Radio frequency
Resistance heating
Thermal resistance
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Summary:This paper focuses on the effect of deep trench isolation (DTI) on self-heating and electrical performances of state-of-the-art SiGeC heterojunction bipolar transistors (HBTs). The influence of DTI on the heat dissipation and on the thermal resistance of HBTs is studied both with electrical measurements and simulations. The results show that the DTI has a significant influence on heat dissipation and on the thermal resistance values but only little impact on RF performances.
ISBN:0780392035
9780780392038
ISSN:1930-8876
DOI:10.1109/ESSDER.2005.1546602