Optical Characteristics of Narrow Band Gap InAs/InAsSb Superlattices

The minority carrier lifetime is one of the important material characterization tools for determining the potential device performance of infrared detectors, since it affects the dark current as well as the quantum efficiency. Significant improvements of the minority carrier lifetime have been recen...

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Bibliographic Details
Published in2018 IEEE Photonics Society Summer Topical Meeting Series (SUM) pp. 91 - 92
Main Authors Khoshakhlagh, A., Ting, L. Hoglund D. Z., Soibel, A., Gunapala, S. D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2018
Subjects
Charge carrier lifetime
Dark current
Infrared detectors
Radiative recombination
Superlattices
Temperature dependence
Temperature measurement
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Summary:The minority carrier lifetime is one of the important material characterization tools for determining the potential device performance of infrared detectors, since it affects the dark current as well as the quantum efficiency. Significant improvements of the minority carrier lifetime have been recently observed for Ga-free type-II InAs/InAsSb SLs. To optimize the InAs/InAsSb SL based materials and further improve the device performance at longer wavelengths, detailed study of mechanisms limiting the lifetime in these SLs is needed. In this presentation, the temperature dependence of the minority carrier lifetime in a LW InAs/InAsSb SL is reported.
ISSN:2376-8614
DOI:10.1109/PHOSST.2018.8456719