Physical Failure Analysis techniques for Cu/low k technology

In this work, physical FA techniques including deprocessing and cross section analysis have been developed and applied to Cu/low k technology. Deprocessing techniques discussed include: wet chemical etching, reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and comb...

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Bibliographic Details
Published inProceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003 pp. 187 - 192
Main Authors Huixian Wu, Hooghan, B., Cargo, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Chemical technology
Copper
Delay
Dielectric materials
Failure analysis
High K dielectric materials
Integrated circuit interconnections
Integrated circuit technology
Ion beams
Wet etching
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Summary:In this work, physical FA techniques including deprocessing and cross section analysis have been developed and applied to Cu/low k technology. Deprocessing techniques discussed include: wet chemical etching, reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and combination of these techniques. For the cross-section analysis of copper/low k samples, focused ion beam and mechanical polishing techniques have been developed and studied. Failure Analysis (FA) challenges and new failure modes, reliability issues will also be addressed.
ISBN:9780780377226
0780377222
DOI:10.1109/IPFA.2003.1222763