Computational study of Silicene-CNT double junctions

In this work, we investigate the contact and channel material dependency of the transport properties of Siticene and Armchair CNT based heterostructure devices. The Density of States (DOS) of the heterojunction materials and transport properties like Device Density of States, transmission eigenstate...

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Bibliographic Details
Published in2017 Devices for Integrated Circuit (DevIC) pp. 446 - 450
Main Authors Mukhopadhyay, Amab, Banerjee, Lopamudra, Sharma, Bikash, Sengupta, Amretashis, Rahaman, Hafizur, Sarkar, Chandan Kumar
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
Carbon nanotubes
CNT
DFTB
Electrodes
Field effect transistors
Graphene
Heterojunctions
Heterostructure
Integrated circuits
NEGF
Siticene
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Summary:In this work, we investigate the contact and channel material dependency of the transport properties of Siticene and Armchair CNT based heterostructure devices. The Density of States (DOS) of the heterojunction materials and transport properties like Device Density of States, transmission eigenstate, transmission pathway, transmission spectrum and I-V characteristics of two structures - CNT-Si-CNT and Si-CNT-Si are investigated. We see that CNT-Silicene-CNT heterojunction gives higher current and it is more conducive for FET device application. This device also shows better transport properties in terms of transmission Eigenstate, Transmission pathway and IV characteristics.
DOI:10.1109/DEVIC.2017.8073989