An Ultra Thin Body Nanoscale Dual Material Double Gate SOI MOSFET

In this paper, we compare the performance of symmetrical dual material double gate (SDMDG) SOI MOSFETs and asymmetrical dual material double gate (ADMDG) SOI MOSFETs. We investigate the influence of gate engineering on the analog performances of both the device structure for system-on-chip applicati...

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Bibliographic Details
Published in2018 3rd International Innovative Applications of Computational Intelligence on Power, Energy and Controls with their Impact on Humanity (CIPECH) pp. 1 - 7
Main Author Kumar, Anil
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
ADMDG
DIBL
Electric fields
Electric potential
Ions
Logic gates
MOSFET
Performance evaluation
SDMDG
Silicon
trans conductance generation factor
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Summary:In this paper, we compare the performance of symmetrical dual material double gate (SDMDG) SOI MOSFETs and asymmetrical dual material double gate (ADMDG) SOI MOSFETs. We investigate the influence of gate engineering on the analog performances of both the device structure for system-on-chip applications using a 2D device simulator (Silvaco TCAD). The gate engineering technique used here is the dual metal gate technology. The SDMDG structure shows better immunity to DIBL, near ideal Sub-threshold Slope (SS), high I on /I off ratio and improved analog performance like trans conductance generation factor, TGF (g m /I d ), output conductance (g d ).
DOI:10.1109/CIPECH.2018.8724290