A Yield Model Incorporating Random and Systematic Yield Part I: Theory

• Published in: 2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference pp. 206 - 215
• Main Author: Melzner, H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2008
• Subjects: Analytical models; Implants; Lithography; Optical sensors; Predictive models; Probability; Semiconductor device manufacture; Temperature; Thermodynamics; Virtual manufacturing
• DOI: 10.1109/ASMC.2008.4529031
• ISBN: 1424419646; 9781424419647
• ISSN: 1078-8743

Since the introduction of the negative binomial yield model and critical area analysis in the 1980s, a golden methodology for modeling, prediction, and analysis of "random" or particle induced yield is in place and has been successfully applied for decades. Unfortunately, this level of maturity is not observed for modeling of "systematic" yield loss. In this paper, we will review and discuss the basics of a yield model that incorporates both "random" and "systematic" effects. Special focus will be on clarification of terms, underlying assumptions and corresponding limitations of the model. Part II of this paper is planned to be presented on a future ASMC conference. It will focus on practical application of the model in the field of lithography.